Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF

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包裝方式：
RS庫存編號:
260-5869
Distrelec 貨號:
302-84-049
製造零件編號:
IRFP3006PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

270A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.87mm

Height

20.7mm

Automotive Standard

No

Distrelec Product Id

30284049

Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF


This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.

Features & Benefits


• High continuous drain current rated at 270A for demanding requirements

• 60V drain-source capability for versatile usage

• Maximum power dissipation of 375W supports robust performance

• Enhanced avalanche capability for better system protection

• Through-hole mounting ensures solid and dependable installation

Applications


• Utilised in high-efficiency synchronous rectification systems

• Ideal for uninterruptible power supplies to ensure reliability

• Effective in high-speed power switching

• Suitable for hard-switched and high-frequency circuitry

What thermal performance can be expected under continuous operating conditions?


With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.

How does the gate threshold voltage contribute to its performance in circuits?


It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.

What are the implications of the low Rds(on) for circuit efficiency?


A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.

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