Infineon HEXFET Type N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220
- RS庫存編號:
- 260-5056
- 製造零件編號:
- AUIRF1404
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD8,635.00
(不含稅)
TWD9,067.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD172.70 | TWD8,635.00 |
| 100 - 450 | TWD141.50 | TWD7,075.00 |
| 500 - 950 | TWD120.70 | TWD6,035.00 |
| 1000 - 1950 | TWD105.80 | TWD5,290.00 |
| 2000 + | TWD99.80 | TWD4,990.00 |
* 參考價格
- RS庫存編號:
- 260-5056
- 製造零件編號:
- AUIRF1404
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 202A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 16.51mm | |
| Width | 10.67 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 202A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 16.51mm | ||
Width 10.67 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
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