Infineon IPP Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 IPP60R040S7XKSA1

RS庫存編號:: 260-1216
製造零件編號:: IPP60R040S7XKSA1
製造商:: Infineon

Infineon IPP Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 IPP60R040S7XKSA1

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RS庫存編號:: 260-1216
製造零件編號:: IPP60R040S7XKSA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	IPP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	245W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	0.82V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Standards/Approvals	RoHS
	Width	15.95 mm
	Length	10.36mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series IPP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 245W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 0.82V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Standards/Approvals RoHS
	Width 15.95 mm
	Length 10.36mm
	Automotive Standard No

Datasheet - IPP60R040S7XKSA1

Infineon Series IPP MOSFET Transistor, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - IPP60R040S7XKSA1

This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.

Features & Benefits

• Designed with CoolMOS™ S7 technology to minimise conduction losses

• Offers a low on-state resistance of 40mΩ for enhanced efficiency

• Capable of handling high pulse currents for demanding requirements

• Optimised for low-frequency switching applications, improving system performance

• Built-in features ensure high reliability in static switching scenarios

Applications

• Utilised for solid-state relays and innovative circuit breaker designs

• Ideal for line rectification within high-power performances such as computing and telecommunications

• Applicable in renewable energy solutions, particularly solar inverters

What are the critical features impacting thermal performance?

The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.

How does this component enhance system efficiency for low-frequency applications?

With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.

What are the recommended practices for using this in high-voltage applications?

It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.