Infineon IPT Type N-Channel MOSFET, 365 A, 100 V, 16-Pin HDSOP IPTC014N10NM5ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD179.00

(不含稅)

TWD187.95

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 1,368 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD179.00
10 - 99TWD171.00
100 - 249TWD162.00
250 - 499TWD154.00
500 +TWD147.00

* 參考價格

包裝方式:
RS庫存編號:
259-2732
製造零件編號:
IPTC014N10NM5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

365A

Maximum Drain Source Voltage Vds

100V

Series

IPT

Package Type

HDSOP

Pin Count

16

Maximum Drain Source Resistance Rds

1.4mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

168nC

Forward Voltage Vf

0.88V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-24

相關連結