Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 2000 件)*

TWD19,600.00

(不含稅)

TWD20,580.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年9月23日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2000 - 2000TWD9.80TWD19,600.00
4000 +TWD9.40TWD18,800.00

* 參考價格

RS庫存編號:
258-3981
製造零件編號:
IRFR220NTRPBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

相關連結