Infineon HEXFET MOSFET, 8.7 A, 150 V, 5-Pin TO-220 IRFI4019H-117PXKMA1

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包裝方式:
RS庫存編號:
258-3974
製造零件編號:
IRFI4019H-117PXKMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

80mΩ

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Low RDS(on)

Dual N-Channel MOSFET

Integrated Half Bridge package

Low Qrr

Environmentally friendly

High power density

Integrated design

Board savings

Low EMI