Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN
- RS庫存編號:
- 258-3971
- 製造零件編號:
- IRFH8303TRPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 258-3971
- 製造零件編號:
- IRFH8303TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
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