製造零件編號

Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON IPP034N08N5AKSA1

RS庫存編號:: 258-3891
製造零件編號:: IPP034N08N5AKSA1
製造商:: Infineon

Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON IPP034N08N5AKSA1

可享批量折扣

小計（1 包，共 2 件）*

TWD160.00

(不含稅)

TWD168.00

訂單超過 $1,300.00 免費送貨

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322 件準備從其他地點送貨

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單位	每單位	每包*
2 - 8	TWD80.00	TWD160.00
10 - 18	TWD76.50	TWD153.00
20 - 28	TWD72.00	TWD144.00
30 - 38	TWD67.50	TWD135.00
40 +	TWD62.00	TWD124.00

* 參考價格

RS庫存編號:: 258-3891
製造零件編號:: IPP034N08N5AKSA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	IPP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.4mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	69nC
	Maximum Power Dissipation Pd	167W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.97V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series IPP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.4mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 69nC
	Maximum Power Dissipation Pd 167W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.97V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPP034N08N5AKSA1

The Infineon OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS 5 80 V MOSFETs offer the industry's lowest RDS(on). Additionally, compared to the previous generation, OptiMOS 5 80 V has an RDS(on) reduction of up to 43%.

Ideal for high switching frequency

Output capacitance reduction of up to 44 %

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON IPP034N08N5AKSA1

訂單超過 $1,300.00 免費送貨

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