Infineon IPD Type P-Channel MOSFET, 42 A, 650 V N TO-252 IPD60R210PFD7SAUMA1
- RS庫存編號:
- 258-3852
- 製造零件編號:
- IPD60R210PFD7SAUMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD59.00
(不含稅)
TWD61.96
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,080 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD29.50 | TWD59.00 |
| 10 - 98 | TWD28.00 | TWD56.00 |
| 100 - 248 | TWD26.50 | TWD53.00 |
| 250 - 498 | TWD26.00 | TWD52.00 |
| 500 + | TWD25.50 | TWD51.00 |
* 參考價格
- RS庫存編號:
- 258-3852
- 製造零件編號:
- IPD60R210PFD7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The 600V CoolMOS PFD7 super junction MOSFET in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
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