Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1
- RS庫存編號:
- 258-3849
- 製造零件編號:
- IPD60N10S412ATMA1
- 製造商:
- Infineon
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小計（1 包，共 2 件）*
TWD77.00
(不含稅)
TWD80.84
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 + | TWD38.50 | TWD77.00 |
* 參考價格
- RS庫存編號:
- 258-3849
- 製造零件編號:
- IPD60N10S412ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
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