製造零件編號

Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

RS庫存編號:: 258-3839
製造零件編號:: IPD35N12S3L24ATMA1
製造商:: Infineon

Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD57,250.00

(不含稅)

TWD60,100.00

訂單超過 $1,300.00 免費送貨

有庫存

7,500 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 2500	TWD22.90	TWD57,250.00
5000 +	TWD22.20	TWD55,500.00

* 參考價格

RS庫存編號:: 258-3839
製造零件編號:: IPD35N12S3L24ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	120V
	Package Type	PG-TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	71W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 120V
	Package Type PG-TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 71W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD35N12S3L24ATMA1

The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

訂單超過 $1,300.00 免費送貨

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