Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263 IPB024N08N5ATMA1
- RS庫存編號:
- 258-3789
- 製造零件編號:
- IPB024N08N5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD79.00
(不含稅)
TWD82.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,000 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD79.00 |
| 10 - 99 | TWD76.00 |
| 100 - 249 | TWD70.00 |
| 250 - 499 | TWD66.00 |
| 500 + | TWD60.00 |
* 參考價格
- RS庫存編號:
- 258-3789
- 製造零件編號:
- IPB024N08N5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 166A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.92V | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 166A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.92V | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
相關連結
- Infineon iPB Type N-Channel MOSFET 80 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263 IPB024N08NF2SATMA1
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263 IPB040N08NF2SATMA1