Infineon HEXFET Type N-Channel MOSFET, 8.3 A, 30 V TSOP-6 IRLTS6342TRPBF
- RS庫存編號:
- 257-9467
- Distrelec 貨號:
- 304-40-555
- 製造零件編號:
- IRLTS6342TRPBF
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 25 件）*
TWD275.00
(不含稅)
TWD288.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,825 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.00 | TWD275.00 |
| 50 - 75 | TWD10.40 | TWD260.00 |
| 100 - 225 | TWD9.80 | TWD245.00 |
| 250 - 975 | TWD9.10 | TWD227.50 |
| 1000 + | TWD8.40 | TWD210.00 |
* 參考價格
- RS庫存編號:
- 257-9467
- Distrelec 貨號:
- 304-40-555
- 製造零件編號:
- IRLTS6342TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLTS series is the 30V single n channel strong IRFET mosfet in a TSOP 6 (Micro 6) package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
High current carrying capability in a small package
相關連結
- Infineon HEXFET Type N-Channel MOSFET 30 V TSOP-6
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 150 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS8342TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V, 6-Pin TSOP-6 IRF5802TRPBF