Infineon HEXFET Type N-Channel MOSFET, 46 A, 250 V TO-220 IRFB4229PBF
- RS庫存編號:
- 257-9347
- 製造零件編號:
- IRFB4229PBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD188.00
(不含稅)
TWD197.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 470 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD94.00 | TWD188.00 |
| 10 - 18 | TWD85.00 | TWD170.00 |
| 20 - 98 | TWD83.00 | TWD166.00 |
| 100 - 498 | TWD69.00 | TWD138.00 |
| 500 + | TWD60.00 | TWD120.00 |
* 參考價格
- RS庫存編號:
- 257-9347
- 製造零件編號:
- IRFB4229PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFB series is the 250V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard through hole power package
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
相關連結
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF
- Infineon HEXFET Type N-Channel MOSFET, 185 A TO-220
- Infineon HEXFET Type N-Channel MOSFET, 185 A TO-220 AUIRFB8405
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN IRFH5053TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-220
