Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

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TWD306.00

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TWD321.30

(含稅)

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5 - 45TWD61.20TWD306.00
50 - 95TWD58.20TWD291.00
100 - 495TWD54.80TWD274.00
500 - 1995TWD51.00TWD255.00
2000 +TWD46.80TWD234.00

* 參考價格

包裝方式:
RS庫存編號:
257-5871
製造零件編號:
IRFH5215TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

150V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

RoHS

Length

6mm

Width

5 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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