Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN

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小計 50 件 (按連續帶提供)*

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TWD1,596.00

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包裝方式:
RS庫存編號:
257-5804P
製造零件編號:
IRFH7084TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.25mΩ

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

127nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

1.05mm

Width

5 mm

Length

6mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available