Infineon HEXFET Type N-Channel MOSFET, 40 A, 20 V PQFN IRLHM620TRPBF

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小計(1 包,共 5 件)*

TWD126.00

(不含稅)

TWD132.30

(含稅)

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單位
每單位
每包*
5 - 45TWD25.20TWD126.00
50 - 95TWD23.80TWD119.00
100 - 495TWD22.60TWD113.00
500 - 1995TWD20.80TWD104.00
2000 +TWD19.20TWD96.00

* 參考價格

包裝方式:
RS庫存編號:
257-5802
製造零件編號:
IRLHM620TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.5mΩ

Maximum Power Dissipation Pd

37W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount package

Potential alternative to high-RDS(on) SuperSO8 package

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