Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN

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小計(1 卷,共 4000 件)*

TWD29,600.00

(不含稅)

TWD31,080.00

(含稅)

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  • 2026年4月06日 發貨
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RS庫存編號:
257-5572
製造零件編號:
IRLHS6276TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Maximum Gate Source Voltage Vgs

±12 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

9.6W

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

2 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

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