製造零件編號

Vishay Type N-Channel MOSFET, 42.8 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4608DP-T1-GE3

RS庫存編號:: 252-0278
製造零件編號:: SIR4608DP-T1-GE3
製造商:: Vishay

Vishay Type N-Channel MOSFET, 42.8 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4608DP-T1-GE3

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可享批量折扣

小計（1 包，共 5 件）*

TWD240.00

(不含稅)

TWD252.00

訂單超過 $1,300.00 免費送貨

有庫存

6,025 件準備從其他地點送貨

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單位	每單位	每包*
5 - 45	TWD48.00	TWD240.00
50 - 95	TWD45.60	TWD228.00
100 - 245	TWD43.00	TWD215.00
250 - 995	TWD40.00	TWD200.00
1000 +	TWD36.80	TWD184.00

* 參考價格

RS庫存編號:: 252-0278
製造零件編號:: SIR4608DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42.8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.01mΩ
	Channel Mode	Depletion
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	56nC
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	5.15 mm
	Height	6.15mm
	Standards/Approvals	No
	Length	6.15mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42.8A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.01mΩ
	Channel Mode Depletion
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 56nC
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 5.15 mm
	Height 6.15mm
	Standards/Approvals No
	Length 6.15mm
	Automotive Standard AEC-Q101

Datasheet - SIR4608DP-T1-GE3

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Vishay Type N-Channel MOSFET, 42.8 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4608DP-T1-GE3

訂單超過 $1,300.00 免費送貨

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