Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS庫存編號:
- 250-0536
- 製造零件編號:
- BSP316PH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD76.00
(不含稅)
TWD79.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,930 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD15.20 | TWD76.00 |
| 10 - 95 | TWD13.80 | TWD69.00 |
| 100 - 245 | TWD12.20 | TWD61.00 |
| 250 - 495 | TWD11.20 | TWD56.00 |
| 500 + | TWD10.00 | TWD50.00 |
* 參考價格
- RS庫存編號:
- 250-0536
- 製造零件編號:
- BSP316PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.68A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-40-496 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.68A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-40-496 | ||
The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A
Maximum power dissipation is 360 mW
相關連結
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223 BSP149H6906XTSA1
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1