Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TSDSON IAUZ40N06S5L050ATMA1
- RS庫存編號:
- 249-8631
- 製造零件編號:
- IAUZ40N06S5L050ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD155.00
(不含稅)
TWD162.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD31.00 | TWD155.00 |
| 10 - 95 | TWD27.80 | TWD139.00 |
| 100 - 245 | TWD25.20 | TWD126.00 |
| 250 - 495 | TWD22.60 | TWD113.00 |
| 500 + | TWD20.00 | TWD100.00 |
* 參考價格
- RS庫存編號:
- 249-8631
- 製造零件編號:
- IAUZ40N06S5L050ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 60V, N-Ch, 5 mohm, Automotive MOSFET with OptiMOS 5 technology for 60V MOSFETs in the industry standard S3O8 3 mm x 3 mm small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.
OptiMOS power MOSFET for automotive applications
N-channel, Enhancement mode, Logic Level
Extended qualification beyond AEC-Q101
Enhanced electrical testing
Robust design
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100 percent Avalanche tested
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