Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8
- RS庫存編號:
- 249-6921
- 製造零件編號:
- IPG20N06S4L26ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD161.00
(不含稅)
TWD169.05
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,755 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD32.20 | TWD161.00 |
| 10 - 95 | TWD29.00 | TWD145.00 |
| 100 - 245 | TWD26.20 | TWD131.00 |
| 250 - 495 | TWD23.20 | TWD116.00 |
| 500 + | TWD20.80 | TWD104.00 |
* 參考價格
- RS庫存編號:
- 249-6921
- 製造零件編號:
- IPG20N06S4L26ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOSTM-T2 | |
| Pin Count | 8 | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 33W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.3V | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOSTM-T2 | ||
Pin Count 8 | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 33W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.3V | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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