Infineon IPT Type N-Channel MOSFET, 174 A, 150 V Enhancement, 8-Pin HSOF-8 IPT044N15N5ATMA1
- RS庫存編號:
- 249-3351
- 製造零件編號:
- IPT044N15N5ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD180.00
(不含稅)
TWD189.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,599 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD180.00 |
| 10 - 99 | TWD162.00 |
| 100 - 249 | TWD146.00 |
| 250 - 499 | TWD131.00 |
| 500 + | TWD118.00 |
* 參考價格
- RS庫存編號:
- 249-3351
- 製造零件編號:
- IPT044N15N5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPT | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPT | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.
Vds (drain to source voltage) is 150 V
Rds (max on) is 4.4 milliohm and Id is 174 A
Qdss and Qg values are 188 nC and 67 nC respectively
相關連結
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8 IPT039N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8 IPT063N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOF-8
