製造零件編號

ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7

RS庫存編號:: 249-1135
製造零件編號:: RW4E065GNTCL1
製造商:: ROHM

ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD30,600.00

(不含稅)

TWD32,130.00

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每卷*
3000 - 12000	TWD10.20	TWD30,600.00
15000 +	TWD9.90	TWD29,700.00

* 參考價格

RS庫存編號:: 249-1135
製造零件編號:: RW4E065GNTCL1
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	HEML1616L7
	Series	RW4E065GN
	Pin Count	7
	Maximum Drain Source Resistance Rds	2.7mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	4.3nC
	Maximum Power Dissipation Pd	104W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type HEML1616L7
	Series RW4E065GN
	Pin Count 7
	Maximum Drain Source Resistance Rds 2.7mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 4.3nC
	Maximum Power Dissipation Pd 104W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - RW4E065GNTCL1

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 30 V drain-source voltage and 6.5 A drain current, taping packing type.

Low on-resistance

Pb-free plating

RoHS compliant

Halogen free

ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7

訂單超過 $1,300.00 免費送貨

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