DiodesZetex Type N-Channel MOSFET, 99 A, 100 V Enhancement, 3-Pin TO-220 DMT10H9M9SCT
- RS庫存編號:
- 246-7546
- 製造零件編號:
- DMT10H9M9SCT
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD289.00
(不含稅)
TWD303.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 185 件從 2026年3月25日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD57.80 | TWD289.00 |
| 10 - 20 | TWD56.00 | TWD280.00 |
| 25 - 95 | TWD55.00 | TWD275.00 |
| 100 - 495 | TWD53.60 | TWD268.00 |
| 500 + | TWD52.60 | TWD263.00 |
* 參考價格
- RS庫存編號:
- 246-7546
- 製造零件編號:
- DMT10H9M9SCT
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.016Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Width | 4.82 mm | |
| Height | 31.24mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.016Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Width 4.82 mm | ||
Height 31.24mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain fast switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO220AB packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 100 V and Maximum gate to source voltage is ±20 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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