DiodesZetex 2 Type P-Channel MOSFET, -20 V Enhancement, 8-Pin PowerDI3333-8 DMP2040UND-7
- RS庫存編號:
- 246-7522
- 製造零件編號:
- DMP2040UND-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD430.00
(不含稅)
TWD451.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD17.20 | TWD430.00 |
| 50 - 75 | TWD16.80 | TWD420.00 |
| 100 - 225 | TWD16.40 | TWD410.00 |
| 250 - 975 | TWD16.00 | TWD400.00 |
| 1000 + | TWD15.70 | TWD392.50 |
* 參考價格
- RS庫存編號:
- 246-7522
- 製造零件編號:
- DMP2040UND-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V Low Gate Threshold voltage Low input Capacitance Low input/output Leakage
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