DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin UDFN-2020 DMN2053UFDB-7

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 25 件)*

TWD200.00

(不含稅)

TWD210.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 1,725 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
25 - 25TWD8.00TWD200.00
50 - 75TWD7.80TWD195.00
100 - 225TWD7.60TWD190.00
250 - 975TWD7.40TWD185.00
1000 +TWD7.20TWD180.00

* 參考價格

包裝方式:
RS庫存編號:
246-7510
製造零件編號:
DMN2053UFDB-7
製造商:
DiodesZetex
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.056Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Power Dissipation Pd

0.82W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

相關連結