DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS庫存編號:
- 244-1915
- 製造零件編號:
- DMN12M8UCA10-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD445.00
(不含稅)
TWD467.25
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD17.80 | TWD445.00 |
| 50 - 475 | TWD17.40 | TWD435.00 |
| 500 - 975 | TWD17.00 | TWD425.00 |
| 1000 + | TWD16.60 | TWD415.00 |
* 參考價格
- RS庫存編號:
- 244-1915
- 製造零件編號:
- DMN12M8UCA10-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | 4-DSN3015-10 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.03mm | |
| Width | 1.54 mm | |
| Standards/Approvals | No | |
| Height | 0.16mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type 4-DSN3015-10 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.03mm | ||
Width 1.54 mm | ||
Standards/Approvals No | ||
Height 0.16mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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