Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL60HS118
- RS庫存編號:
- 243-9303
- 製造零件編號:
- IRL60HS118
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD77.00
(不含稅)
TWD80.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 7,950 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD15.40 | TWD77.00 |
| 10 - 95 | TWD15.20 | TWD76.00 |
| 100 - 245 | TWD14.60 | TWD73.00 |
| 250 - 495 | TWD14.20 | TWD71.00 |
| 500 + | TWD14.00 | TWD70.00 |
* 參考價格
- RS庫存編號:
- 243-9303
- 製造零件編號:
- IRL60HS118
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IRFH | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IRFH | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRL60HS118 N-Channel Power MOSFET available in three different voltage classes (60 V, 80 V and 100 V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Higher power density designs
Higher switching frequency
Uses OptiMOSTM5 Chip
Reduced parts count wherever 5V supplies are available
Driven directly from microcontrollers (slow switching)
System cost reductions
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