Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- RS庫存編號:
- 242-5826
- 製造零件編號:
- IPB60R045P7ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 卷，共 1000 件）*
TWD119,300.00
(不含稅)
TWD125,260.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD119.30 | TWD119,300.00 |
| 2000 + | TWD115.70 | TWD115,700.00 |
* 參考價格
- RS庫存編號:
- 242-5826
- 製造零件編號:
- IPB60R045P7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Integrated gate resistor RG
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
相關連結
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1