Infineon iPB Type N-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263 IPB120N10S405ATMA1
- RS庫存編號:
- 242-5825
- 製造零件編號:
- IPB120N10S405ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD96.00
(不含稅)
TWD100.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,987 件從 2026年6月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD96.00 |
| 10 - 99 | TWD94.00 |
| 100 - 249 | TWD92.00 |
| 250 - 499 | TWD89.00 |
| 500 + | TWD86.00 |
* 參考價格
- RS庫存編號:
- 242-5825
- 製造零件編號:
- IPB120N10S405ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET offers D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements.
N-channel - Normal Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
相關連結
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB60R060C7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1