Infineon IPL Type N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R750P7ATMA1
- RS庫存編號:
- 240-8556
- Distrelec 貨號:
- 304-24-009
- 製造零件編號:
- IPLK80R750P7ATMA1
- 製造商:
- Infineon
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TWD122.00
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TWD128.10
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD61.00 | TWD122.00 |
| 10 - 98 | TWD60.00 | TWD120.00 |
| 100 - 248 | TWD58.00 | TWD116.00 |
| 250 - 498 | TWD56.50 | TWD113.00 |
| 500 + | TWD55.50 | TWD111.00 |
* 參考價格
- RS庫存編號:
- 240-8556
- Distrelec 貨號:
- 304-24-009
- 製造零件編號:
- IPLK80R750P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPL | |
| Package Type | ThinPAK 5x6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.42mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPL | ||
Package Type ThinPAK 5x6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.42mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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