Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
- RS庫存編號:
- 240-6640
- 製造零件編號:
- IQE065N10NM5ATMA1
- 製造商:
- Infineon
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TWD158.00
(不含稅)
TWD165.90
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD79.00 | TWD158.00 |
| 10 - 98 | TWD77.50 | TWD155.00 |
| 100 - 248 | TWD75.50 | TWD151.00 |
| 250 - 498 | TWD74.00 | TWD148.00 |
| 500 + | TWD72.00 | TWD144.00 |
* 參考價格
- RS庫存編號:
- 240-6640
- 製造零件編號:
- IQE065N10NM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.73V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.73V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 100V PQFN 3.3x3.3 Source-Down features 100 V and low RDS(on) of 6.5 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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