Infineon ISK Type N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN
- RS庫存編號:
- 240-6376
- 製造零件編號:
- ISK024NE2LM5
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD36,300.00
(不含稅)
TWD38,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 12,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD12.10 | TWD36,300.00 |
| 6000 + | TWD11.70 | TWD35,100.00 |
* 參考價格
- RS庫存編號:
- 240-6376
- 製造零件編號:
- ISK024NE2LM5
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | ISK | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.81V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series ISK | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.81V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a best-in-class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDSon of 2.4 mΩ.
Superior thermal resistance for a PQFN 2x2 package
Optimized for highest performance and power density
Industrys lowest RDSon in smallest PQFN 2x2 package
N-channel
100% Avalanche tested
Pb-free lead plating; RoHS compliant
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