Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 2 件)*

TWD140.00

(不含稅)

TWD147.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 1,758 件從 2026年3月23日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
2 - 48TWD70.00TWD140.00
50 - 98TWD69.00TWD138.00
100 - 248TWD67.50TWD135.00
250 - 498TWD67.00TWD134.00
500 +TWD65.50TWD131.00

* 參考價格

包裝方式:
RS庫存編號:
240-1975
製造零件編號:
PSMN2R0-55YLHX
製造商:
Nexperia
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK56E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13.6mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

12.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

相關連結