Vishay N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3
- RS庫存編號:
- 239-8676
- 製造零件編號:
- SQJQ112E-T1_GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD346.00
(不含稅)
TWD363.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,000 件從 2026年12月04日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD173.00 | TWD346.00 |
| 50 - 98 | TWD171.50 | TWD343.00 |
| 100 - 248 | TWD167.50 | TWD335.00 |
| 250 - 998 | TWD164.50 | TWD329.00 |
| 1000 + | TWD160.50 | TWD321.00 |
* 參考價格
- RS庫存編號:
- 239-8676
- 製造零件編號:
- SQJQ112E-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00253Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00253Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
Thin package
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