製造零件編號

Vishay SIS Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

RS庫存編號:: 239-5398P
製造零件編號:: SISA10BDN-T1-GE3
製造商:: Vishay

Vishay SIS Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

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小計 50 件 (按連續帶提供)*

TWD990.00

(不含稅)

TWD1,039.50

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有庫存

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單位	每單位
50 - 90	TWD19.80
100 - 240	TWD19.40
250 - 990	TWD18.60
1000 +	TWD18.10

* 參考價格

RS庫存編號:: 239-5398P
製造零件編號:: SISA10BDN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Series	SIS
	Package Type	PowerPAK 1212-8PT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Maximum Power Dissipation Pd	63W
	Typical Gate Charge Qg @ Vgs	11.7nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.3 mm
	Length	3.3mm
	Standards/Approvals	RoHS
	Height	0.75mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Series SIS
	Package Type PowerPAK 1212-8PT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Maximum Power Dissipation Pd 63W
	Typical Gate Charge Qg @ Vgs 11.7nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.3 mm
	Length 3.3mm
	Standards/Approvals RoHS
	Height 0.75mm
	Automotive Standard No

Datasheet - SISA10BDN-T1-GE3

The Vishay N channel MOSFET has drain current of 104 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection

100 % Rg and UIS tested