Vishay SIA Type P-Channel MOSFET, 9 A, 30 V PowerPAK SC-70 SIA4371EDJ-T1-GE3
- RS庫存編號:
- 239-5370
- 製造零件編號:
- SIA4371EDJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD275.00
(不含稅)
TWD288.75
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,025 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.00 | TWD275.00 |
| 50 - 75 | TWD10.70 | TWD267.50 |
| 100 - 225 | TWD10.30 | TWD257.50 |
| 250 - 975 | TWD10.10 | TWD252.50 |
| 1000 + | TWD9.70 | TWD242.50 |
* 參考價格
- RS庫存編號:
- 239-5370
- 製造零件編號:
- SIA4371EDJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIA | |
| Package Type | PowerPAK SC-70 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.045Ω | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIA | ||
Package Type PowerPAK SC-70 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.045Ω | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay TrenchFET P-channel power MOSFET has drain current of -9 A . It is used in power management for portable and consumer, load switch, charger switches, battery switches
100 % Rg tested
Thermally enhanced PowerPAK® SC-70 package
Typical ESD protection 3000 V
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