ROHM QH8KB6 Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin TSMT-8 QH8KB6TCR
- RS庫存編號:
- 235-2665
- 製造零件編號:
- QH8KB6TCR
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD44,100.00
(不含稅)
TWD46,320.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD14.70 | TWD44,100.00 |
| 15000 + | TWD14.40 | TWD43,200.00 |
* 參考價格
- RS庫存編號:
- 235-2665
- 製造零件編號:
- QH8KB6TCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSMT-8 | |
| Series | QH8KB6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.85 mm | |
| Length | 3.1mm | |
| Height | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSMT-8 | ||
Series QH8KB6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.85 mm | ||
Length 3.1mm | ||
Height 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM dual N channel MOSFET which supports 40V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free