STMicroelectronics STHU36N Type N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- RS庫存編號:
- 234-8898P
- 製造零件編號:
- STHU36N60DM6AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 10 件 (按連續帶提供)*
TWD1,600.00
(不含稅)
TWD1,680.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 560 件從 2026年8月31日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 10 - 99 | TWD160.00 |
| 100 - 249 | TWD156.00 |
| 250 - 499 | TWD153.00 |
| 500 + | TWD149.00 |
* 參考價格
- RS庫存編號:
- 234-8898P
- 製造零件編號:
- STHU36N60DM6AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STHU36N | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 210W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STHU36N | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 210W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
相關連結
- EOZ Push Button Switch Panel Mount SPST 250V ac, IP65
- Vishay LH1511BT Series Solid State Relay PCB Mount, 200 V ac/dc Load
- Jumo diraTRON Panel Mount PID Temperature Controller 3 Output 2 Relay 110 → 240 V
- Fluke 179 Handheld Digital Multimeter 10A ac Max 1000V ac Max
- Honeywell Amplified Airflow Sensor AWM3000 Series
- Amphenol Industrial Pin Contacts Screw
- Festo Compressed Air Pipe Blue Polyurethane 6mm x 50m PUN Series, 159664
- Portescap Brushless DC Motor 15 V dc 9300 rpm, 3mm Shaft Diameter