STMicroelectronics STHU36N Type N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- RS庫存編號:
- 234-8898P
- 製造零件編號:
- STHU36N60DM6AG
- 製造商:
- STMicroelectronics
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可享批量折扣
小計 10 件 (按連續帶提供)*
TWD1,450.00
(不含稅)
TWD1,522.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
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單位 | 每單位 |
|---|---|
| 10 - 99 | TWD145.00 |
| 100 - 249 | TWD142.00 |
| 250 - 499 | TWD139.00 |
| 500 + | TWD135.00 |
* 參考價格
- RS庫存編號:
- 234-8898P
- 製造零件編號:
- STHU36N60DM6AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HU3PAK | |
| Series | STHU36N | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 210W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HU3PAK | ||
Series STHU36N | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 210W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested