Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0803LSATMA1
- RS庫存編號:
- 234-6991
- 製造零件編號:
- BSZ0803LSATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD172.00
(不含稅)
TWD180.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 4,995 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD34.40 | TWD172.00 |
| 10 - 95 | TWD34.00 | TWD170.00 |
| 100 - 245 | TWD33.60 | TWD168.00 |
| 250 - 495 | TWD32.20 | TWD161.00 |
| 500 + | TWD32.00 | TWD160.00 |
* 參考價格
- RS庫存編號:
- 234-6991
- 製造零件編號:
- BSZ0803LSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSZ | |
| Package Type | TSDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSZ | ||
Package Type TSDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.
Logic level availability
Low on-state resistance RDS(on)
Low gate, output and reverse recovery charge
Excellent thermal behaviour
100% avalanche tested
Pb-free lead plating
Halogen-freeaccordingtoIEC61249-2-21
RoHS compliant
Available in 2 small standard packages
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