Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN ISZ0804NLSATMA1

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TWD223.00

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TWD234.15

(含稅)

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每單位
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5 - 5TWD44.60TWD223.00
10 - 95TWD43.20TWD216.00
100 - 245TWD42.40TWD212.00
250 - 495TWD41.00TWD205.00
500 +TWD38.00TWD190.00

* 參考價格

包裝方式:
RS庫存編號:
232-6778
製造零件編號:
ISZ0804NLSATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15.5mΩ

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

3.4mm

Width

1.1 mm

Height

3.4mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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