onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF NTBL082N65S3HF
- RS庫存編號:
- 230-9083
- 製造零件編號:
- NTBL082N65S3HF
- 製造商:
- onsemi
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- RS庫存編號:
- 230-9083
- 製造零件編號:
- NTBL082N65S3HF
- 製造商:
- onsemi
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H-PSOF | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 313W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 13.28mm | |
| Width | 2.4 mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H-PSOF | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 313W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 13.28mm | ||
Width 2.4 mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
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