onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF NTBL082N65S3HF
- RS庫存編號:
- 230-9083
- 製造零件編號:
- NTBL082N65S3HF
- 製造商:
- onsemi
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 230-9083
- 製造零件編號:
- NTBL082N65S3HF
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | H-PSOF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Length | 10.2mm | |
| Height | 13.28mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type H-PSOF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Length 10.2mm | ||
Height 13.28mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
相關連結
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin H-PSOF
- onsemi NTBL050N65S Type N-Channel MOSFET 650 V Enhancement, 8-Pin H-PSOF
- onsemi NTBL050N65S Type N-Channel MOSFET 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220 FCP165N65S3