Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1
- RS庫存編號:
- 229-1833
- 製造零件編號:
- IPD50N08S413ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD445.50
(不含稅)
TWD467.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 9,900 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | TWD29.70 | TWD445.50 |
| 30 - 75 | TWD28.90 | TWD433.50 |
| 90 - 225 | TWD28.30 | TWD424.50 |
| 240 - 465 | TWD27.50 | TWD412.50 |
| 480 + | TWD26.80 | TWD402.00 |
* 參考價格
- RS庫存編號:
- 229-1833
- 製造零件編號:
- IPD50N08S413ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 72W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 72W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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