Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- RS庫存編號:
- 229-1742
- 製造零件編號:
- AUIRFR5410TRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD312.00
(不含稅)
TWD327.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 8,540 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD62.40 | TWD312.00 |
| 10 - 95 | TWD61.00 | TWD305.00 |
| 100 - 245 | TWD59.40 | TWD297.00 |
| 250 - 495 | TWD57.80 | TWD289.00 |
| 500 + | TWD56.20 | TWD281.00 |
* 參考價格
- RS庫存編號:
- 229-1742
- 製造零件編號:
- AUIRFR5410TRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | AUIRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 66W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series AUIRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 66W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
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