Infineon ISC007N04NM6 Type N-Channel MOSFET, 48 A, 40 V, 8-Pin TDSON ISC007N04NM6ATMA1
- RS庫存編號:
- 228-6557
- 製造零件編號:
- ISC007N04NM6ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD463.00
(不含稅)
TWD486.15
(含稅)
訂單超過 $1,300.00 免費送貨
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- 5,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD92.60 | TWD463.00 |
| 10 - 95 | TWD90.20 | TWD451.00 |
| 100 - 245 | TWD88.00 | TWD440.00 |
| 250 - 495 | TWD86.00 | TWD430.00 |
| 500 + | TWD79.80 | TWD399.00 |
* 參考價格
- RS庫存編號:
- 228-6557
- 製造零件編號:
- ISC007N04NM6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISC007N04NM6 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 117nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2 mm | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISC007N04NM6 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 117nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.2 mm | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon ISC007N04NM6 optiMOSTM 6 power MOSFET 40V normal level, the Infineon offers a benchmark solution for normal level required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.
N-channel enhancement mode
Normal level gate threshold 2.3 V typical
MSL1 up to 260°C peak reflow
175°C junction temperature
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