STMicroelectronics Type N-Channel MOSFET, 46 A, 600 V Enhancement, 8-Pin TO-LL STO65N60DM6

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包裝方式：
RS庫存編號:
228-3053
製造零件編號:
STO65N60DM6
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-LL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

76mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

320W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65.2nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Excellent switching performance thanks to the extra driving source pin

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