Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- RS庫存編號:
- 222-4733
- Distrelec 貨號:
- 304-39-411
- 製造零件編號:
- IRF1010ESTRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD514.00
(不含稅)
TWD539.70
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 40 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD51.40 | TWD514.00 |
| 20 - 90 | TWD50.10 | TWD501.00 |
| 100 - 240 | TWD48.90 | TWD489.00 |
| 250 - 490 | TWD47.50 | TWD475.00 |
| 500 + | TWD44.10 | TWD441.00 |
* 參考價格
- RS庫存編號:
- 222-4733
- Distrelec 貨號:
- 304-39-411
- 製造零件編號:
- IRF1010ESTRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
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