Infineon CoolMOS Type N-Channel MOSFET, 76 A, 600 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 222-4731P
- 製造零件編號:
- IPZA60R037P7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 10 件 (以管提供)*
TWD2,920.00
(不含稅)
TWD3,066.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 108 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 10 - 99 | TWD292.00 |
| 100 - 249 | TWD285.00 |
| 250 - 499 | TWD278.00 |
| 500 + | TWD257.00 |
* 參考價格
- RS庫存編號:
- 222-4731P
- 製造零件編號:
- IPZA60R037P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products