Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1

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小計(1 包,共 5 件)*

TWD440.00

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TWD462.00

(含稅)

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每單位
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5 - 5TWD88.00TWD440.00
10 - 95TWD85.60TWD428.00
100 - 245TWD83.20TWD416.00
250 - 495TWD81.20TWD406.00
500 +TWD79.20TWD396.00

* 參考價格

包裝方式:
RS庫存編號:
222-4642
製造零件編號:
IPA60R180C7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Qualified for standard grade applications according to JEDEC standards

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